| 上研磨盤轉速 Upper grinding disc speed | 1000 ~ 4000 rpm |
| 下載盤轉速 Download disc rotation speed | 1 ~ 60 rpm |
| 研磨晶圓尺寸 Grinding wafer size | 12 吋 (300mm) |
| 研磨前晶圓厚度 Wafer thickness before grinding | 725 μm |
| 研磨後晶圓厚度 Wafer thickness after grinding | 250 μm ± 2 μm |
| 軸向研磨速率 Axial grinding speed | 15 ~ 20 μm/min |
| 研磨後表面粗糙度 Surface roughness after grinding | Ra ≦ 0.03 μm |
| 研磨後表面均勻性 Surface uniformity after grinding | ≦ ± 10% |
| 項目 / 晶圓尺寸 | 100mm | 125mm | 150mm | 200mm | 300mm |
|---|---|---|---|---|---|
| 半導體類型 | P & N | P & N | P & N | P & N | P & N |
| 量產薄化規格 | > 80μm | > 80μm | > 80μm | > 80μm | > 250μm |
| 研發薄化規格 | 25μm | 25μm | 25μm | 25μm | 200μm |
| 晶背金屬種類 | 1. Ti / Ni / Ag 2. Ti / Ni / Au 3. Ti / Ni / Alloy 4. Ti / NiV / Ag | ||||
| 晶背金屬膜厚 |
1. Ti / Ni / Ag : 1/3/10KA 或 2/3/20KA 2. Ti / Ni / Au : 1/3KA / 客戶自訂規格 |
||||
| 研磨厚度差 (TTV) | 1μm | 1μm | 1μm | 1μm | 1μm |
| 晶圓翹曲度 (Warp) | < 1mm | < 1mm | < 1.5mm | < 1.5mm | < 5mm |
